QSiC™ 1700V SiC Schottky Diode

QSiC™ 1700V SiC Schottky Diode

Features • Unipolar rectifier with surge current • Zero reverse recovery current • Fast, temperature-independent switching • All parts tested to greater than 1870V
QSiC™ 1700V SiC Schottky Diode

QSiC™ 1700V SiC Schottky Diode

Features • Unipolar rectifier with surge current • Zero reverse recovery current • Fast, temperature-independent switching • Avalanche tested to 1250mJ* • All parts tested to greater than 1,870V
1700V SiC Power Module Dual Diode Pack

1700V SiC Power Module Dual Diode Pack

Features – Zero reverse recovery – Zero forward recovery – Temperature independent switching behavior – Positive temperature coefficient on VF • Low stray inductance • High junction temperature operation • All parts tested to greater than...
1700V SiC Power Module Dual Diode Pack

1700V SiC Power Module Dual Diode Pack

Features SiC Schottky Diode – Zero reverse recovery – Zero forward recovery – Temperature independent switching behavior – Positive temperature coefficient on VF • Low stray inductance • High junction temperature operation • All parts tested to...
QSiC™ 1200V SiC Half-Bridge Module

QSiC™ 1200V SiC Half-Bridge Module

Features • 62mm standard footprint • High speed switching SiC MOSFETs • Reliable body diode • All parts tested to above 1350V • Kelvin reference for stable operation • AlN Isolated baseplate