Timothy has 30 years of experience with semiconductor devices, SiC power devices and power modules, and advanced power electronics systems. He is actively managing in design and development of SiC MOSFETs, SBDs, and power modules at SemiQ Inc. His experience, capability and leadership will provide a “Powering the SiC Evolution” model for sustainable and efficient SiC solutions. He holds a BS and an MS in Electrical Engineering from Busan National University and a PhD in Electrical Engineering from KAIST.
1200V | 40mΩ SiC 7L MOSFET
SemiQ has engineered this MOSFET to provide the best trade-off of conduction and switching losses to benefit the widest possible range of applications. SiC MOSFETs bring high efficiency to high-performance applications including electric vehicles, power supplies and data centers and are specifically designed and tested to operate reliably in extreme environments. Compared to legacy Silicon IGBTs, SemiQ’s MOSFETs switch faster with lower losses, enabling system-level benefits through reduced size, weight and cooling requirements
Features
- 100% Avalanche Tested
- Outstanding Short Circuit Withstand Time
- High temperature tolerance
- Superior gate oxide reliability
- Reduced switching losses
Specification | |
---|---|
Id (Amps) | 63 |
Package | TO-263-7L |
VDC | 1200V |