Timothy has 30 years of experience with semiconductor devices, SiC power devices and power modules, and advanced power electronics systems. He is actively managing in design and development of SiC MOSFETs, SBDs, and power modules at SemiQ Inc. His experience, capability and leadership will provide a “Powering the SiC Evolution” model for sustainable and efficient SiC solutions. He holds a BS and an MS in Electrical Engineering from Busan National University and a PhD in Electrical Engineering from KAIST.
1200V | 80mΩ SiC MOSFET and 10A SBD Copack in SOT-227
SemiQ SiC MOSFETs have benefits in many applications including PFC Boost Converter, DC-DC Converter Primary Switching and Synchronous rectification. Combined with paralleled Silicon Carbide Schottky diode inside module, optimal performance can be achieved without the trade-offs made with Silicon devices. Designers working on EV Charging, Solar/Wind, Industrial Controls, and HVAC systems can all benefit from the increased performance achieved with SemiQ SiC MOSFETs.
Features
- High speed switching SiC MOSFETs
- Freewheeling diode with zero reverse recovery SiC SBD
- Kelvin reference for stable operation
- Low junction to case thermal resistance
- Direct mounting to heatsink (isolated package)
Specification | |
---|---|
Id (Amps) | 30 |
Package | SOT-227 |
VDC | 1200V |