1700V SiC Power Module Dual Diode Pack

GHXS050B170S-D3

Features

SiC Schottky Diode
– Zero reverse recovery
– Zero forward recovery
– Temperature independent switching behavior
– Positive temperature coefficient on VF
• Low stray inductance
• High junction temperature operation
• All parts tested to greater than 1,870V

Specification
If (Amps) 50
Package SOT-227
VDC 1700V