QSiC™ 1200V SiC MOSFET Power Module – GCMS080C120S1-E1

Download Datasheet Mounting Instructions

GCMS080C120S1-E1

Features
• High speed switching SiC MOSFETs
• Freewheeling SiC SBD with zero reverse recovery
• All parts tested to greater than 1,400V
• Kelvin reference for stable operation
• Isolated backplate
• Avalanche tested to 160mJ

Benefits
• Low switching losses
• Low junction to case thermal resistance
• Very rugged and easy mount
• Direct mounting to heatsink (isolated package)
• Lower QRR at high temperature

Applications
• Photovoltaic Inverter
• Battery charger
• Server power supplies
• Energy storage system

Specification
Id (Amps) 28
Package SOT-227
VDC 1200 V