QSiC™ 1700V SiC MOSFET

GP2T030A170H

Features

• High speed switching
• Reliable body diode
• All parts tested to greater than 1,900V
• Avalanche tested to 600mJ
• Driver source pin for gate driving

Benefits

• Lower capacitance
• Higher system efficiency
• Easy to parallel
• Lower Switching Loss
• Longer creepage distance

Applications

• Solar Inverters
• Switch mode power supplies, UPS
• Induction heating and welding
• EV charging stations
• High voltage DC/DC converters
• Motor drives

Specification
Id (Amps) 83
Package TO-247-4L
VDC 1700