QSiC™ 1200V SiC MOSFET – GP3T014A120H

QSiC™ 1200V SiC MOSFET – GP3T014A120H

by | Jul 10, 2025

Features • High speed switching • Reliable body diode • All parts tested to greater than 1,400V • Avalanche tested to 800mJ • Driver source pin for gate driving Benefits • Lower capacitance • Higher system efficiency • Easy to parallel • Lower Switching Loss • Longer...
QSiC™ 1200V SiC MOSFET Power Module – GCMX016C120S1-E1

QSiC™ 1200V SiC MOSFET Power Module – GCMX016C120S1-E1

by | Apr 25, 2025

Features • High speed switching SiC MOSFETs • All parts tested to greater than 1,400V • Kelvin reference for stable operation • Isolated backplate • Avalanche tested to 800mJ Benefits • Low switching losses • Low junction to case thermal resistance • Very rugged and...
QSiC™ 1200V SiC MOSFET Power Module – GCMX016C120S1-E1

QSiC™ 1200V SiC MOSFET Power Module – GCMX080C120S1-E1

by | Apr 24, 2025

Features • High speed switching SiC MOSFETs • All parts tested to greater than 1,400V • Kelvin reference for stable operation • Isolated backplate • Avalanche tested to 160mJ Benefits • Low switching losses • Low junction to case thermal resistance • Very rugged and...
QSiC™ 1200V SiC MOSFET Power Module – GCMX016C120S1-E1

QSiC™ 1200V SiC MOSFET Power Module – GCMS080C120S1-E1

by | Apr 24, 2025

Features • High speed switching SiC MOSFETs • Freewheeling SiC SBD with zero reverse recovery • All parts tested to greater than 1,400V • Kelvin reference for stable operation • Isolated backplate • Avalanche tested to 160mJ Benefits • Low switching losses • Low...
QSiC™ 1200V SiC MOSFET Power Module – GCMX016C120S1-E1

QSiC™ 1200V SiC MOSFET Power Module – GCMX040C120S1-E1

by | Apr 24, 2025

Features • High speed switching SiC MOSFETs • All parts tested to greater than 1,400V • Kelvin reference for stable operation • Isolated backplate • Avalanche tested to 330mJ Benefits • Low switching losses • Low junction to case thermal resistance • Very rugged and...