Gen3 Schottky Diode Reliability

Reliability Stress Diode Voltage Samples # Samples 1500 Hours Device Hours
H3TRB 650V 2015 1935 3,840,000
1200V 1405 1230 1,990,000
1700V 640 240 1,000,000
HTRB 650V 2175 1440 6,105,760
1200V 2104 1300 2,850,000
1700V 800 240 1,200,000
HTSL 650V 160 - 160,000
1200V 91 - 91,000
UHAST 1200V 240 - 23,040
Reliability Stress Diode Voltage Samples Device Cycles  
Temperature Cycling 650V 825 830,000  
1200V 782 484,000  
1700V 60 60,000  
IOL 650V 800 2,400,000  
1200V 240 720,000  


Life Beyond JEDEC

The extremely demanding environments of high-power semiconductor applications require rigorous reliability testing well beyond typical JEDEC industrial requirements. SemiQ performs reliability qualification by exposing the products to various stress tests at voltages, temperatures, humidity and pressure greater than expected in the final customer application. These severe conditions are applied to the parts over a period of time. The objective is to precipitate failures in an accelerated manner compared to use conditions. Failures are analyzed for opportunities to improve the product design thus improving the reliability performance. SemiQ has accumulated reliability data on all products during product qualification and extended testing well beyond the standard 1000 hour qualification time to gain additional confidence. A brief description of reliability tests is outlined below.

Test Descriptions

High Temperature Reverse Bias (HTRB) – JESD22 A108

High temperature reverse bias testing is performed to evaluate a device’s long term reliability to operation at high temperatures and high blocking voltages. Device failures can occur at the Schottky interface and the edge termination as a result of prolonged high electric field and temperature.

High Humidity High Temperature Reverse Bias (H3TRB) – JESD22 A101

H3TRB testing is used to evaluate a package’s ability to operate in a high humidity environment. Conditions are applied to accelerate moisture penetration through the molding compound to expose moisture failure modes like internal corrosion, oxidation, and shorting.

Unbiased Highly Accelerated Stress Test (uHAST) – JESD22 A118

UHAST testing is used to evaluate a package’s ability to resist moisture. This test is performed with no bias and high pressure to evaluate the device mechanically. The test highly accelerates the moisture penetration through the package molding material or at the interfaces.

Temperature Cycling (TC) – JESD22 A104

Temperature cycling tests are performed to evaluate a device’s resistance to electrical or mechanical failure due to the difference in the thermal coefficients of expansion of the different materials in the device caused by changes in the environment. The test uses extreme changes in temperature repeatedly to accelerate damage from thermo mechanical stresses between materials at the interface.

Intermittent Operating Life (IOL) – MIL STD 750, Method 1037

Intermittent operating life tests are performed to evaluate a device’s resistance to thermo mechanical failures due to a device’s internal power dissipation. This similar to temperature cycling with the change in temperature occurring because of the device’s self-heating from electrical operation.

High Temperature Storage (HTS) – JESD22 A103

High temperature storage testing is performed to evaluate a device’s resistance to storage conditions, usually the effect of time and temperature on unbiased parts in storage.

SemiQ, Inc.

Address20692 Prism Place

AddressLake Forest, CA 92630-7803

Phone+1 (949) 273-4373

What we do

SemiQ, Inc. designs, develops and manufactures Silicon Carbide (SiC) Power Semiconductors, SiC Power Modules, as well as SiC Epi Wafers. In addition, SemiQ's expertise in power conversion sub systems design is available to customers who want application support and help designing with SiC devices and modules.  SemiQ also offers semi-custom SiC Power Modules.

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