3rd Generation SiC Diode Modules rated for 650/1200 VDC and 50/100 Amps

In standard SOT-227 package

Lake Forest, Calif. – January 15, 2021: SemiQ, Inc. is proud to announce the release of its third generation 650/1200V 50/100A SiC Schottky Diode modules developed in the industry standard SOT-227 packages.

Part Number Descriptions
GHXS050B065S-D3 650V 50A Parallel Diodes
GHXS100B065S-D3 650V 100A Parallel Diodes
GHXS050B120S-D3 1200V 50A Parallel Diodes
GHXS100B120S-D3 1200V 50A Parallel Diodes


Michael T. Robinson, SemiQ President states that, “These 650V/1200V Silicon Carbide Schottky Diode Modules are the latest extension to our Gen 3 product family which was introduced in 2020. This platform was designed and built for reliability and ruggedness with high breakdown voltage and high surge current rating. They are qualified using JEDEC standard reliability testing including HTRB and H3TRB.”

SemiQ’s SiC Diode Modules are optimized for power conversion applications where low losses and high efficiency are critical including: renewable energy, electric vehicle charging station, uninterruptable power supplies (UPS), solar power, and fuel cell power systems.

Samples are in stock at SemiQ and available through DigiKey and Mouser. Please visit www.SemiQ.com for specifications and to request samples or volume pricing.