SemiQ Announces Next Generation 650V, 1200V, and 1700V Silicon Carbide Schottky Diode Family

Jan 7, 2020 - SemiQ (previously Global Power) announces the release to production of its new 3rd generation SiC Diode Family featuring blocking voltages of 650V, 1200V and 1700V with forward current starting at 8 amps up to 50 A per chip. Packages include TO-220-2L, TO-220-3L, TO-247-2L, TO-247-3L, SOT-227, TO-263 as well as bare die.

These Gen 3 product represents a huge improvement in reliability, device ruggedness, surge current capability, and moisture resistance. Extensive qualification testing includes over 12 million device hours of HTRB and H3TRB. All packaged devices are 100% tested for unclamped inductive load. As an additional benefit to the customer, SemiQ provides a robust and reliable, redundant supply chain, including 3+ suppliers of SiC substrates, 4+ suppliers of SiC EPI, 2 qualified SiC wafer fabs, and multiple sources for high volume packaging and testing.