650V | 10A SiC Schottky Diode - Bare Die
GP3D010A065X
Fabricated on 150mm wafers with robust characteristics including Improved moisture resistance, > 20 million hours (HTRB & H3TRB), Improved surge currents and low defect density.
Features
- Unipolar rectifier with surge current
- Zero reverse recovery current
- Fast, temperature-independent switching
- Reduced temperature dependence of Vf
Specification | |
---|---|
If (Amps) | 10 |
Package | 1.78 x 1.78mm |
VDC | 650 VDC |