1200V | 10A SiC Schottky Diode - Bare Die
GP3D010A120X
Fabricated on 150mm wafers with robust characteristics including Improved moisture resistance, > 20 million hours (HTRB & H3TRB), Improved surge currents and low defect density.
Features
- Unipolar rectifier with surge current
- Zero reverse recovery current
- Fast, temperature-independent switching
- Reduced temperature dependence of Vf
| Specification | |
|---|---|
| If (Amps) | 10 |
| Package | 2.4 x 2.4xmm |
| VDC | 1200 VDC |