650V | 12A SiC Schottky Diode - Bare Die
GP3D012A065X
Fabricated on 150mm wafers with robust characteristics including Improved moisture resistance, > 20 million hours (HTRB & H3TRB), Improved surge currents and low defect density.
Features
- Unipolar rectifier with surge current
- Zero reverse recovery current
- Fast, temperature-independent switching
- Reduced temperature dependence of Vf
Specification | |
---|---|
If (Amps) | 12 |
Package | 1.5 x 2.9mm |
VDC | 650 VDC |