1200V | 20mΩ SiC 4L MOSFET
GP2T020A120H
SemiQ has engineered this MOSFET to provide the best trade-off of conduction and switching losses to benefit the widest possible range of applications.
SiC MOSFETs bring high efficiency to high-performance applications including electric vehicles, power supplies and data centers and are specifically designed and tested to operate reliably in extreme environments. Compared to legacy Silicon IGBTs, SemiQ’s MOSFETs switch faster with lower losses, enabling system-level benefits through reduced size, weight and cooling requirements
Features
- 100% Avalanche Tested
- Outstanding Short Circuit Withstand Time
- High temperature tolerance
- Superior gate oxide reliability
- Reduced switching losses
| Specification | |
|---|---|
| VDC | 1200 |
| Id | 119 |
| Rds_on | 18 |
| Package | TO-247-4L |