1200V | 40mΩ SiC MOSFET and 10A SBD Copack in SOT-227

GCMS040B120S1-E1

GCMS040B120S1-E1

SemiQ SiC MOSFETs have benefits in many applications including PFC Boost Converter, DC-DC Converter Primary Switching and Synchronous rectification. Combined with paralleled Silicon Carbide Schottky diode inside module, optimal performance can be achieved without the trade-offs made with Silicon devices. Designers working on EV Charging, Solar/Wind, Industrial Controls, and HVAC systems can all benefit from the increased performance achieved with SemiQ SiC MOSFETs.

Features

  • High speed switching SiC MOSFETs
  • Freewheeling diode with zero reverse recovery SiC SBD
  • Kelvin reference for stable operation
  • Low junction to case thermal resistance
  • Direct mounting to heatsink (isolated package)
Specification
VDC 1200V
Id 57A
Rds_on 37mΩ
Package SOT-227

SemiQ, Inc.

Address20692 Prism Place

AddressLake Forest, CA 92630-7803

Phone+1 (949) 273-4373
Emaisalessales@SemiQ.com

What we do

SemiQ, Inc. designs, develops and manufactures Silicon Carbide (SiC) Power Semiconductors, SiC Power Modules, as well as SiC Epi Wafers. In addition, SemiQ's expertise in power conversion sub systems design is available to customers who want application support and help designing with SiC devices and modules.  SemiQ also offers semi-custom SiC Power Modules.

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