1200V | 80mΩ SiC 4L MOSFET

GP2T080A120H

GP2T080A120H

SemiQ SiC MOSFETs have benefits in many applications including Power Factor Correction, DC-DC Converter Primary Switching and Synchronous rectification. Combined with Silicon Carbide Schottky diodes, optimal performance can be achieved without the trade-offs made with Silicon devices. Designers working on EV Charging, Solar/Wind, Industrial Controls, and HVAC systems can all benefit from the increased performance achieved with SemiQ SiC MOSFETs.

Features

  • Reduced switching losses
  • Higher efficiency
  • Increased power density
  • Reduced heat-sink size
  • Higher reliability
Specification
VDC 1200
Id 35
Rds_on 77
Package TO-247-4L

SemiQ, Inc.

Address20692 Prism Place

AddressLake Forest, CA 92630-7803

Phone+1 (949) 273-4373
Emaisalessales@SemiQ.com

What we do

SemiQ, Inc. designs, develops and manufactures Silicon Carbide (SiC) Power Semiconductors, SiC Power Modules, as well as SiC Epi Wafers. In addition, SemiQ's expertise in power conversion sub systems design is available to customers who want application support and help designing with SiC devices and modules.  SemiQ also offers semi-custom SiC Power Modules.

Sign-Up For Updates