1200V | 80mΩ SiC 3L MOSFET
GP2T080A120U
SemiQ SiC MOSFETs have benefits in many applications including Power Factor Correction, DC-DC Converter Primary Switching and Synchronous rectification. Combined with Silicon Carbide Schottky diodes, optimal performance can be achieved without the trade-offs made with Silicon devices. Designers working on EV Charging, Solar/Wind, Industrial Controls, and HVAC systems can all benefit from the increased performance achieved with SemiQ SiC MOSFETs.
Features
- Reduced switching losses
- Higher efficiency
- Increased power density
- Reduced heat-sink size
- Higher reliability
Specification | |
---|---|
VDC | 1200 |
Id | 35 |
Rds_on | 77 |
Package | TO-247-3L |