Robust 650V SiC Schottky Diodes

Discrete Components


SemiQ has designed our family of SQ3D 650V diodes for Active Power Factor Correction applications with a higher surge current and higher breakdown voltage rating.  Although similar in performance to other 650V diodes, these diodes are built on higher voltage substrates allowing the breakdown voltage to be raised to ~1100V and increasing the surge current rating by up to 32% versus our Gen3 diodes.

DOWNLOAD PRODUCT SUMMARY

650V | 12A SiC Schottky Diode 650V | 12A SiC Schottky Diode
06 TO-220-2L 650 VDC
650V | 10A SiC Schottky Diode 650V | 10A SiC Schottky Diode
12 TO-263-2L (D2PAK) 600 VDC
600V | 12A SiC Schottky Diode 600V | 12A SiC Schottky Diode
08 TO-220-2L 650 VDC
650V | 10A SiC Schottky Diode 650V | 10A SiC Schottky Diode
08 TO-263-2L (D2PAK) 650 VDC
650V | 10A SiC Schottky Diode 650V | 10A SiC Schottky Diode
10 TO-220-2L 650 VDC
650V | 10A SiC Schottky Diode 650V | 10A SiC Schottky Diode
12 TO-263-2L (D2PAK) 650 VDC

SemiQ, Inc.

Address20692 Prism Place

AddressLake Forest, CA 92630-7803

Phone+1 (949) 273-4373
Emaisalessales@SemiQ.com

What we do

SemiQ, Inc. designs, develops and manufactures Silicon Carbide (SiC) Power Semiconductors, SiC Power Modules, as well as SiC Epi Wafers. In addition, SemiQ's expertise in power conversion sub systems design is available to customers who want application support and help designing with SiC devices and modules.  SemiQ also offers semi-custom SiC Power Modules.

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