1200V SiC Half-Bridge Module

1200V SiC Half-Bridge Module

Features 62mm footprint with reduced package height (17 mm) Low inductance, low profile footprint Reduced voltage spikes and ringing Higher switching frequency operation Improved power density Enhanced EMI...
1200V SiC Full-Bridge Module

1200V SiC Full-Bridge Module

Features • High speed switching SiC MOSFETs • Reliable body diode • All parts tested to above 1350V • Kelvin reference for stable operation • Press fit terminal connections
650V SiC Schottky Diode

650V SiC Schottky Diode

Amp+ TM Features • Unipolar rectifier with surge current • Zero reverse recovery current • Fast, temperature-independent switching • Avalanche tested to 38mJ* • All parts tested to greater than 715V • Isolated...
650V SiC Schottky Diode

650V SiC Schottky Diode

Amp+ TM Features • Unipolar rectifier with surge current • Zero reverse recovery current • Fast, temperature-independent switching • Avalanche tested to 29mJ* • All parts tested to greater than 715V • Isolated...
1200V SiC MOSFET

1200V SiC MOSFET

Features High speed switching Reliable body diode All parts tested to greater than 1,400V