Timothy has 30 years of experience with semiconductor devices, SiC power devices and power modules, and advanced power electronics systems. He is actively managing in design and development of SiC MOSFETs, SBDs, and power modules at SemiQ Inc. His experience, capability and leadership will provide a “Powering the SiC Evolution” model for sustainable and efficient SiC solutions. He holds a BS and an MS in Electrical Engineering from Busan National University and a PhD in Electrical Engineering from KAIST.
1200V | 400A SiC Schottky Diode Module
SemiQ SiC Schottky Diode Modules enhance performance with the latest SiC chip sets and minimized package parasitics. SemiQ SiC Schottky Diodes exhibit low on-state resistance at high temperatures with excellent switching performance, simplifying the thermal design of power electronic systems.
Features
- Zero reverse recovery
- Zero forward recovery
- Temperature independent switching behavior
- Positive temperature coefficient on VF
- Low stray inductance
Specification | |
---|---|
If (Amps) | 400 |
Package | S7 Half Bridge |
VDC | 1200V |