Timothy has 30 years of experience with semiconductor devices, SiC power devices and power modules, and advanced power electronics systems. He is actively managing in design and development of SiC MOSFETs, SBDs, and power modules at SemiQ Inc. His experience, capability and leadership will provide a “Powering the SiC Evolution” model for sustainable and efficient SiC solutions. He holds a BS and an MS in Electrical Engineering from Busan National University and a PhD in Electrical Engineering from KAIST.
1200V SiC Half-Bridge Module
Features
- 62mm footprint with reduced package height (17 mm)
- Low inductance, low profile footprint
- Reduced voltage spikes and ringing
- Higher switching frequency operation
- Improved power density
- Enhanced EMI performance
Specification | |
---|---|
Id (Amps) | 348 |
Package | S7 Half Bridge |
VDC | 1200V |