1200V | 80mΩ SiC 4L MOSFET

GP2T080A120H

GP2T080A120H

SemiQ SiC MOSFETs have benefits in many applications including Power Factor Correction, DC-DC Converter Primary Switching and Synchronous rectification. Combined with Silicon Carbide Schottky diodes, optimal performance can be achieved without the trade-offs made with Silicon devices. Designers working on EV Charging, Solar/Wind, Industrial Controls, and HVAC systems can all benefit from the increased performance achieved with SemiQ SiC MOSFETs.

Features

  • Reduced switching losses
  • Higher efficiency
  • Increased power density
  • Reduced heat-sink size
  • Higher reliability
Specification
VDC 1200
Id 35
Rds_on 77
Package TO-247-4L

SemiQ, Inc.

Address20692 Prism Place

AddressLake Forest, CA 92630-7803

Phone+1 (949) 273-4373
Emaisalessales@SemiQ.com

我们在做什么

SemiQ有限公司着力于设计、开发和生产碳化硅(SiC)功率器件、碳化硅功率模块以及碳化硅外延片。除此之外,SemiQ在功率转换子系统设计方面有着专业的知识,可以协助需要应用程序支持, 设计碳化硅器件和模块的客户。SemiQ还提供半定制式的碳化硅功率模块。

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