1200V | 80mΩ SiC MOSFET in SOT-227

GCMX080B120S1-E1

GCMX080B120S1-E1

SemiQ SiC MOSFETs have benefits in many applications including PFC Boost Converter, DC-DC Converter Primary Switching and Synchronous rectification. Combined with Silicon Carbide Schottky diode, optimal performance can be achieved without the trade-offs made with Silicon devices. Designers working on EV Charging, Solar/Wind, Industrial Controls, and HVAC systems can all benefit from the increased performance achieved with SemiQ SiC MOSFETs.

Features

  • High speed switching SiC MOSFETs
  • Kelvin reference for stable operation
  • Low junction to case thermal resistance
  • Very rugged and easy mount
  • Direct mounting to heatsink (isolated package)
Specification
VDC 1200 VDC
Id 30A
Rds_on 77mΩ
Package SOT-227

SemiQ, Inc.

Address20692 Prism Place

AddressLake Forest, CA 92630-7803

Phone+1 (949) 273-4373
Emaisalessales@SemiQ.com

我们在做什么

SemiQ有限公司着力于设计、开发和生产碳化硅(SiC)功率器件、碳化硅功率模块以及碳化硅外延片。除此之外,SemiQ在功率转换子系统设计方面有着专业的知识,可以协助需要应用程序支持, 设计碳化硅器件和模块的客户。SemiQ还提供半定制式的碳化硅功率模块。

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