1700V | 200A Silicon IGBT Modules

GSID200A170S3B1

GSID200A170S3B1

SemiQ Silicon IGBT Modules provde high efficiency and fast switching by combining simple MOSFET gate-drive with the high current and low saturation voltage switching capability of bipolar transistors. Features include Short Circuit Rated 10?s; Low Saturation Voltage, Low Switching Losses, RBSOA Tested, Low Stray Inductance and Lead Free (RoHS) compliance. These features make them well-suited for a wide range of power conversion applications.
Specification
Ic 200
Package 106.4 x 61.4 x 30.8mm
Vces 1700

SemiQ, Inc.

Address20692 Prism Place

AddressLake Forest, CA 92630-7803

Phone+1 (949) 273-4373
Emaisalessales@SemiQ.com

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SemiQ有限公司着力于设计、开发和生产碳化硅(SiC)功率器件、碳化硅功率模块以及碳化硅外延片。除此之外,SemiQ在功率转换子系统设计方面有着专业的知识,可以协助需要应用程序支持, 设计碳化硅器件和模块的客户。SemiQ还提供半定制式的碳化硅功率模块。

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