1200VDC SiC Schottky Diodes

Bare Die


Fabricated on 150mm wafers with robust characteristics including Improved moisture resistance, > 8 million hours (HTRB & H3TRB), Improved surge currents and low defect density.

 

SemiQ SiC die are available in the following formats:

    Unsawn wafer - part number ends in "X"

    Sawn wafer on blue tape - suffix is "SBT"

1200V | 30A SiC Schottky Diode - Bare Die 1200V | 30A SiC Schottky Diode - Bare Die
30 3.9 x 3.9mm 1200 VDC
1200V | 20A SiC Schottky Diode - Bare Die 1200V | 20A SiC Schottky Diode - Bare Die
20 3.25 x 3.25mm 1200 VDC
1200V | 15A SiC Schottky Diode - Bare Die 1200V | 15A SiC Schottky Diode - Bare Die
15 2.12 x 4.1mm 1200 VDC
1200V | 10A SiC Schottky Diode - Bare Die 1200V | 10A SiC Schottky Diode - Bare Die
10 2.4 x 2.4xmm 1200 VDC
1200V | 50A SiC Schottky Diode - Bare Die 1200V | 50A SiC Schottky Diode - Bare Die
50 4.93 x 4.93mm 1200 VDC

SemiQ, Inc.

Address20692 Prism Place

AddressLake Forest, CA 92630-7803

Phone+1 (949) 273-4373
Emaisalessales@SemiQ.com

我们在做什么

SemiQ有限公司着力于设计、开发和生产碳化硅(SiC)功率器件、碳化硅功率模块以及碳化硅外延片。除此之外,SemiQ在功率转换子系统设计方面有着专业的知识,可以协助需要应用程序支持, 设计碳化硅器件和模块的客户。SemiQ还提供半定制式的碳化硅功率模块。

注册获取更新