Robust 650V SiC Schottky Diodes

Discrete Components


SemiQ has designed our family of SQ3D 650V diodes for Active Power Factor Correction applications with a higher surge current and higher breakdown voltage rating.  Although similar in performance to other 650V diodes, these diodes are built on higher voltage substrates allowing the breakdown voltage to be raised to ~1100V and increasing the surge current rating by up to 32% versus our Gen3 diodes.

DOWNLOAD PRODUCT SUMMARY

650V | 6A SiC Schottky Diode 650V | 6A SiC Schottky Diode
06 TO-220-2L 650 VDC
650V | 6A SiC Schottky Diode 650V | 6A SiC Schottky Diode
12 TO-263-2L (D2PAK) 600 VDC
600V | 8A SiC Schottky Diode 600V | 8A SiC Schottky Diode
08 TO-220-2L 650 VDC
650V | 8A SiC Schottky Diode 650V | 8A SiC Schottky Diode
08 TO-263-2L (D2PAK) 650 VDC
650V | 10A SiC Schottky Diode 650V | 10A SiC Schottky Diode
10 TO-220-2L 650 VDC
650V | 10A SiC Schottky Diode 650V | 10A SiC Schottky Diode
12 TO-263-2L (D2PAK) 650 VDC

SemiQ, Inc.

Address20692 Prism Place

AddressLake Forest, CA 92630-7803

Phone+1 (949) 273-4373
Emaisalessales@SemiQ.com

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SemiQ有限公司着力于设计、开发和生产碳化硅(SiC)功率器件、碳化硅功率模块以及碳化硅外延片。除此之外,SemiQ在功率转换子系统设计方面有着专业的知识,可以协助需要应用程序支持, 设计碳化硅器件和模块的客户。SemiQ还提供半定制式的碳化硅功率模块。

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