QSiC™ 1200V SiC MOSFET – GP3T080A120TS

GP3T080A120TS

Features

• High speed switching
• All parts tested to greater than 1,400V
• Avalanche tested to 160mJ
• Driver source pin for gate driving
• Ceramic isolated back paddle

Benefits

• Top side cooling
• Isolated thermal path
• Lower capacitance
• Higher system efficiency
• Easy to parallel
• Lower Switching Loss
• Longer clearance distance

Applications

• Solar Inverters
• Switch mode power supplies, UPS
• Induction heating and welding
• EV charging stations
• High voltage DC/DC converters
• Motor drives
• Onboard charger

Specification
Id (Amps) 27
Package TSPAK
VDC 1200