Media
SemiQ Announces New QSiC™ 1200 V SOT-227 SiC Modules Advancing Energy Standards
Ultra-efficient modules support innovative new designs for EVs, medical power supplies, and solar high-power applications.
Lawrence Livermore National Laboratory Chooses SemiQ’s Silicon Carbide Device for Particle Accelerator Project
Livermore, CA and Lake Forest, CA March 7, 2023 – Lawrence Livermore National Laboratory has chosen SemiQ, Inc. to supply Silicon Carbide diodes for an ongoing particle accelerator project.
SemiQ Announces Launch of 1200V 40mΩ Silicon Carbide MOSFET
September 29, 2022, Lake Forest, CA – SemiQ today announced the launch of its 2nd Generation Silicon Carbide power switch, a 1200V 40mΩ SiC MOSFET, expanding its portfolio of SiC power devices.
SemiQ Announces Launch of 1200V 80mΩ Silicon Carbide MOSFET
November 1, 2021, Lake Forest, CA – SemiQ today announced the launch of its 2nd Generation Silicon Carbide power switch, a 1200V 80mΩ SiC MOSFET, expanding its portfolio of SiC power devices. This MOSFET complements the company’s existing SiC rectifiers at 650V, 1200V and 1700V.
