Silicon Carbide for
Liquid Cooling in
AI Data Centers
As computing power and rack densities in AI data centres increase, traditional air cooling is reaching its limits, and without a shift towards liquid cooling, high-performance servers will overheat, leading to shutdowns.
The dielectric fluids and other coolants used in the data center can absorb and transfer heat far more effectively, enabling performance to be maintained even as power densities continue to rise. In liquid-cooled data centers, these coolants are circulated through the servers with heat transferred to chillers and cooling towers.
Within the chiller, power electronics such as the QSiC™ Dual3 modules drive high-performance compressors and active front-ends to manage this process. These modules deliver the efficiency, reliability, and power density required for liquid chiller applications.
Benefits of SemiQ SiC MOSFETs in AI Data Centers
Low switching losses
Low junction to case
thermal resistance
Very rugged and
easy mounting
Direct mounting to heatsink
(isolated package)
Lower QRR at
high temperature
High power density
Schematic of a Data Center Cooling System
SemiQ QSiC™ Dual3 in Data Center Cooling Systems
The QSiC™ Dual3 family of 1200 V half-bridge MOSFET modules enables the creation of power converters with both industry-leading conversion efficiency and power density.
The series includes an optional parallel Schottky barrier diode to further reduce switching losses in high-temperature environments.
| Part Numbers | VDC | Package | SBD | RDS(on) |
|---|---|---|---|---|
| GCMX1P0B120S4B1 | 1200 V | S4B1 Half Bridge | N | 1 mΩ |
| GCMX1P4B120S4B1 | 1200 V | S4B1 Half Bridge | N | 1.4 mΩ |
| GCMX2P0B120S4B1 | 1200 V | S4B1 Half Bridge | N | 2 mΩ |
| GCMS1P0B120S4B1 | 1200 V | S4B1 Half Bridge | Y | 1 mΩ |
| GCMS1P4B120S4B1 | 1200 V | S4B1 Half Bridge | Y | 1.4 mΩ |
| GCMS2P0B120S4B1 | 1200 V | S4B1 Half Bridge | Y | 2 mΩ |
