Timothy has 30 years of experience with semiconductor devices, SiC power devices and power modules, and advanced power electronics systems. He is actively managing in design and development of SiC MOSFETs, SBDs, and power modules at SemiQ Inc. His experience, capability and leadership will provide a “Powering the SiC Evolution” model for sustainable and efficient SiC solutions. He holds a BS and an MS in Electrical Engineering from Busan National University and a PhD in Electrical Engineering from KAIST.
1200V | 20A SiC Schottky Diode – Bare Die
Fabricated on 150mm wafers with robust characteristics including Improved moisture resistance, > 20 million hours (HTRB & H3TRB), Improved surge currents and low defect density.
Features
- Unipolar rectifier with surge current
- Zero reverse recovery current
- Fast, temperature-independent switching
- Reduced temperature dependence of Vf
Specification | |
---|---|
If (Amps) | 20 | VDC | 1200V |