Timothy has 30 years of experience with semiconductor devices, SiC power devices and power modules, and advanced power electronics systems. He is actively managing in design and development of SiC MOSFETs, SBDs, and power modules at SemiQ Inc. His experience, capability and leadership will provide a “Powering the SiC Evolution” model for sustainable and efficient SiC solutions. He holds a BS and an MS in Electrical Engineering from Busan National University and a PhD in Electrical Engineering from KAIST.
1200V SiC MOSFET
Features
- High speed switching
- Reliable body diode
- All parts tested to greater than 1,400V
Specification | |
---|---|
If (Amps) | 20 | VDC | 1200V |