QSiC™ 1200V SiC Half Bridge Module – GCMS1P4B120S4B1

GCMS1P4B120S4B1

Features

• 62mm x 152mm industry standard footprint
• High speed switching SiC MOSFETs
• Freewheeling SiC SBD with zero reverse recovery
• All parts tested to greater than 1,350V
• Kelvin reference for stable operation

Benefits

• Low switching losses
• Low junction to case thermal resistance
• Very rugged and easy mounting
• Direct mounting to heatsink (isolated package)
• Lower QRR at high temperature

Applications

• Motor drives
• EV applications
• Smart-grid
• Uninterruptible power supply (UPS)

Specification
Id (Amps) 813
Package S4 Half Bridge
VDC 1200