QSiC™ 1200V SiC Half Bridge Module – GCMX3P5B120S3B1-N

GCMX3P5B120S3B1-N

Features

• 62mm standard footprint
• High speed switching SiC MOSFETs
• Reliable body diode
• All parts tested to greater than 1,350V
• Kelvin reference for stable operation
• AlN Isolated baseplate

Benefits

• Low switching losses
• Low junction to case thermal resistance
• Very rugged and easy mounting
• Direct mounting to heatsink (isolated package)
• Low thermal impedance

Applications

• Photovoltaic and Wind Inverter
• EV/Battery charger
• Energy storage system
• High voltage DC to DC converter
• Induction Heating
• SMPS and UPS

Specification
Id (Amps) 428
Package S3 Half Bridge
VDC 1200