QSiC™ 1200V SiC Half Bridge Module – GCMX3P5B120S7B1

GCMX3P5B120S7B1

Features

• 62mm footprint with reduced package height (17 mm)
• High speed switching SiC MOSFETs
• All parts tested to greater than 1,350V
• Kelvin reference for stable operation
• Isolated baseplate

Benefits

• Lower inductance from reduced package height
• Low switching losses
• Low junction to case thermal resistance
• Very rugged and easy mounting
• Direct mounting to heatsink (isolated package)

Applications

• Photovoltaic and Wind Inverter
• EV/Battery charger
• Energy storage system
• High voltage DC to DC converter
• Induction Heating
• SMPS and UPS

 

Specification
Id (Amps) 361
Package S7 Half Bridge
VDC 1200