QSiC™ 1200V SiC MOSFET – GP3T017A120H

GP3T017A120H

Features

  • High speed switching
  • Reliable body diode
  • All parts tested to greater than 1,400V
  • Avalanche tested to 700mJ
  • Driver source pin for gate driving

Benefits

  • Lower capacitance
  • Higher system efficiency
  • Easy to parallel
  • Lower Switching Loss
  • Longer creepage distance

Applications

  • Solar Inverters
  • Switch mode power supplies, UPS
  • Induction heating and welding
  • EV charging stations
  • High voltage DC/DC converters
  • Motor drives
Specification
Id (Amps) 120
Package TO-247-4L
VDC 1200