QSiC™ 1200V SiC MOSFET – GP3T072A120H

GP3T072A120H

Features

• High speed switching
• Reliable body diode
• All parts tested to greater than 1,400V
• Avalanche tested to 160mJ
• Driver source pin for gate driving

Benefits

• Lower capacitance
• Higher system efficiency
• Easy to parallel
• Lower Switching Loss
• Longer creepage distance

Applications

• Solar Inverters
• Switch mode power supplies, UPS
• Induction heating and welding
• EV charging stations
• High voltage DC/DC converters
• Motor drives

Specification
Id (Amps) 31
Package TO-247-4L
VDC 1200