QSiC™ 1200V SiC MOSFET – GP3T080A120J

GP3T080A120J

Features
• High speed switching
• Reliable body diode
• All parts tested to greater than 1,400V
• Avalanche tested to 160mJ
• Driver source pin for gate driving

Benefits
• Lower capacitance
• Higher system efficiency
• Easy to parallel
• Lower Switching Loss
• Longer creepage distance
• Small footprint

Applications
• Solar Inverters
• Switch mode power supplies, UPS
• Induction heating and welding
• EV charging stations
• High voltage DC/DC converters
• Motor drives

Specification
Id (Amps) 33 A
Package TO-263-7L
VDC 1200 V