QSiC™ 1200V SiC MOSFET – GP4T011A120H

GP4T011A120H

Features:

• High speed switching
• Reliable body diode
• All parts tested to greater than 1,400V
• Avalanche tested to 800mJ
• Driver source pin for gate driving

Benefits:

• Lower capacitance
• Higher system efficiency
• Easy to parallel
• Lower Switching Loss
• Longer creepage distance

Applications:

• Solar Inverters
• Switch mode power supplies, UPS
• Induction heating and welding
• EV charging stations
• High voltage DC/DC converters
• Motor drives

Specification
Id (Amps) 147
Package TO-247-4L
VDC 1200