QSiC™ 1200V SiC Half Bridge Module – GCMS1P0B120S4B1-N

QSiC™ 1200V SiC Half Bridge Module – GCMS1P0B120S4B1-N

by | Jun 4, 2026

Features • 62mm x 152mm industry standard footprint • High speed switching SiC MOSFETs • Freewheeling SiC SBD with zero reverse recovery • All parts tested to greater than 1,350V • Kelvin reference for stable operation • AlN Isolated baseplate Benefits • Low switching...
QSiC™ 1200V SiC Half Bridge Module – GCMS1P0B120S4B1-N

QSiC™ 1200V SiC Half Bridge Module – GCMS1P4B120S4B1-N

by | Jun 4, 2026

Features • 62mm x 152mm industry standard footprint • High speed switching SiC MOSFETs • Freewheeling SiC SBD with zero reverse recovery • All parts tested to greater than 1,350V • Kelvin reference for stable operation • AlN Isolated baseplate Benefits • Low switching...
QSiC™ 1200V SiC Half Bridge Module – GCMS1P0B120S4B1-N

QSiC™ 1200V SiC Half Bridge Module – GCMS2P0B120S4B1-N

by | Jun 4, 2026

Features • 62mm x 152mm industry standard footprint • High speed switching SiC MOSFETs • Freewheeling SiC SBD with zero reverse recovery • All parts tested to greater than 1,350V • Kelvin reference for stable operation • AlN Isolated baseplate Benefits • Low switching...
QSiC™ 1200V SiC Half Bridge Module – GCMS1P0B120S4B1-N

QSiC™ 1200V SiC Half Bridge Module – GCMX1P0B120S4B1-N

by | Jun 4, 2026

Features • 62mm x 152mm industry standard footprint • High speed switching SiC MOSFETs • All parts tested to greater than 1,350V • Kelvin reference for stable operation • AlN Isolated baseplate Benefits • Low switching losses • Low junction to case thermal resistance...
QSiC™ 1200V SiC Half Bridge Module – GCMS1P0B120S4B1-N

QSiC™ 1200V SiC Half Bridge Module – GCMX1P4B120S4B1-N

by | Jun 4, 2026

Features • 62mm x 152mm industry standard footprint • High speed switching SiC MOSFETs • All parts tested to greater than 1,350V • Kelvin reference for stable operation • AlN Isolated baseplate Benefits • Low switching losses • Low junction to case thermal resistance...