QSiC™ 1200V SiC MOSFET Power Module – GCMX080C120S1-E1

QSiC™ 1200V SiC MOSFET Power Module – GCMX080C120S1-E1

Features • High speed switching SiC MOSFETs • All parts tested to greater than 1,400V • Kelvin reference for stable operation • Isolated backplate • Avalanche tested to 160mJ Benefits • Low switching losses • Low junction to case thermal resistance • Very rugged and...
QSiC™ 1200V SiC COPACK Power Module

QSiC™ 1200V SiC COPACK Power Module

Features • High speed switching SiC MOSFETs • Freewheeling SiC SBD with zero reverse recovery • Simple to drive • Kelvin reference for stable operation
1200V SiC COPACK Power Module

1200V SiC COPACK Power Module

Features High speed switching SiC MOSFETs Freewheeling SiC SBD with zero reverse recovery Simple to drive Kelvin reference for stable operation
QSiC™ 1200V SiC MOSFET Power Module – GCMX080C120S1-E1

1200V | 40mΩ SiC MOSFET in SOT-227

SemiQ SiC MOSFETs have benefits in many applications including PFC Boost Converter, DC-DC Converter Primary Switching and Synchronous rectification. Combined with Silicon Carbide Schottky diode, optimal performance can be achieved without the trade-offs made with...