QSiC™ 1200V SiC MOSFET – GP3T017A120H

QSiC™ 1200V SiC MOSFET – GP3T017A120H

by | Jul 10, 2025

Features High speed switching Reliable body diode All parts tested to greater than 1,400V Avalanche tested to 700mJ Driver source pin for gate driving Benefits Lower capacitance Higher system efficiency Easy to parallel Lower Switching Loss Longer creepage distance...
QSiC™ 1200V SiC MOSFET – GP3T014A120X

QSiC™ 1200V SiC MOSFET – GP3T014A120X

by | Jul 10, 2025

Features • High speed switching • Reliable body diode • All parts tested to greater than 1,400V Benefits • Lower capacitance • Higher system efficiency • Easy to parallel Applications • Solar Inverters • Switch mode power supplies, UPS • Induction heating and welding...
QSiC™ 1200V SiC MOSFET – GP3T017A120H

QSiC™ 1200V SiC MOSFET – GP3T014A120H

by | Jul 10, 2025

Features • High speed switching • Reliable body diode • All parts tested to greater than 1,400V • Avalanche tested to 800mJ • Driver source pin for gate driving Benefits • Lower capacitance • Higher system efficiency • Easy to parallel • Lower Switching Loss • Longer...
QSiC™ 1200V SiC MOSFET Power Module – GCMX016C120S1-E1

QSiC™ 1200V SiC MOSFET Power Module – GCMX016C120S1-E1

by | Apr 25, 2025

Features • High speed switching SiC MOSFETs • All parts tested to greater than 1,400V • Kelvin reference for stable operation • Isolated backplate • Avalanche tested to 800mJ Benefits • Low switching losses • Low junction to case thermal resistance • Very rugged and...
QSiC™ 1200V SiC MOSFET Power Module – GCMX016C120S1-E1

QSiC™ 1200V SiC MOSFET Power Module – GCMX080C120S1-E1

by | Apr 24, 2025

Features • High speed switching SiC MOSFETs • All parts tested to greater than 1,400V • Kelvin reference for stable operation • Isolated backplate • Avalanche tested to 160mJ Benefits • Low switching losses • Low junction to case thermal resistance • Very rugged and...