QSiC™ 1200V SiC MOSFET Power Module – GCMX007C120S1-E1

QSiC™ 1200V SiC MOSFET Power Module – GCMX007C120S1-E1

Features • High speed switching SiC MOSFETs • All parts tested to greater than 1,400V • Kelvin reference for stable operation • Isolated backplate • Avalanche tested to 800mJ Benefits • Low switching losses • Low junction to case thermal resistance • Very rugged and...
QSiC™ 1200V SiC MOSFET Power Module – GCMX007C120S1-E1

QSiC™ 1200V SiC COPACK Power Module – GCMS014C120S1-E1

Features • High speed switching SiC MOSFETs • Freewheeling SiC SBD with zero reverse recovery • All parts tested to greater than 1,400V • Kelvin reference for stable operation • Isolated backplate • Avalanche tested to 800mJ Benefits • Low switching losses • Low...
QSiC™ 1200V SiC MOSFET Power Module – GCMX007C120S1-E1

QSiC™ 1200V SiC COPACK Power Module – GCMS007C120S1-E1

Features • High speed switching SiC MOSFETs • Freewheeling SiC SBD with zero reverse recovery • All parts tested to greater than 1,400V • Kelvin reference for stable operation • Isolated backplate • Avalanche tested to 800mJ Benefits • Low switching losses • Low...
QSiC™ 1200V SiC MOSFET – GP3T080A120TS

QSiC™ 1200V SiC MOSFET – GP3T080A120TS

Features • High speed switching • All parts tested to greater than 1,400V • Avalanche tested to 160mJ • Driver source pin for gate driving • Ceramic isolated back paddle Benefits • Top side cooling • Isolated thermal path • Lower capacitance • Higher system efficiency...
QSiC™ 1200V SiC MOSFET – GP3T080A120TS

QSiC™ 1200V SiC MOSFET – GP3T040A120TS

Features • High speed switching • All parts tested to greater than 1,400V • Avalanche tested to 330mJ • Driver source pin for gate driving • Ceramic isolated back paddle Benefits • Top side cooling • Isolated thermal path • Lower capacitance • Higher system efficiency...