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Timothy has 30 years of experience with semiconductor devices, SiC power devices and power modules, and advanced power electronics systems. He is actively managing in design and development of SiC MOSFETs, SBDs, and power modules at SemiQ Inc. His experience, capability and leadership will provide a “Powering the SiC Evolution” model for sustainable and efficient SiC solutions. He holds a BS and an MS in Electrical Engineering from Busan National University and a PhD in Electrical Engineering from KAIST.

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SemiQ 1200V SiC Full-Bridge Modules Simplify Development of Solar Inverters, Energy Storage and Battery Charging Applications

SemiQ 1200V SiC Full-Bridge Modules Simplify Development of Solar Inverters, Energy Storage and Battery Charging Applications

by admin | Feb 19, 2025 | Media

Tested to over 1350W, modules integrate two low-loss high-speed switching SiC MOSFETs with reliable body diode and deliver up to 333W with continuous drain of up to 102A February 19, 2025, Lake Forest, CA – SemiQ Inc, a designer, developer, and global supplier of...
SemiQ 1200 V Third-Generation SiC MOSFET Cuts Size While Improving Performance and Reducing Switching Losses in High-Power Applications

SemiQ 1200 V Third-Generation SiC MOSFET Cuts Size While Improving Performance and Reducing Switching Losses in High-Power Applications

by admin | Feb 11, 2025 | Media

QSiC 1200V is Automotive Qualified to AEC-Q101 and Known-Good-Die tested beyond 1400 V, targets EV‑charging, UPS, renewable power generation and motor‑driver applications February 11, 2025, Lake Forest, CA – SemiQ Inc, a designer, developer, and global supplier of...
SemiQ QSiC 1700 V Series of High-Reliability, Low-Loss SiC MOSFETs Target Renewables, Energy Storage and EV Charging Applications

SemiQ QSiC 1700 V Series of High-Reliability, Low-Loss SiC MOSFETs Target Renewables, Energy Storage and EV Charging Applications

by admin | Jan 21, 2025 | Media

AEC-Q101 qualified bare die and discrete packaged devices are WLBI screened and tested to avalanche breakdown voltage over 2200 V; power and half-bridge modules available to simplify system design January 21, 2025, Lake Forest, CA – SemiQ Inc, a designer, developer,...
SemiQ to Present SiC for High-Performance, High-Density Power Designs at Electronica 2024

SemiQ to Present SiC for High-Performance, High-Density Power Designs at Electronica 2024

by admin | Nov 4, 2024 | Media

Advanced Technologies for Energy Efficiency in EV Charging, Renewable Power, and Motor Drives Will be on Display at Hall A5, 421. November 5, 2024, Lake Forest, CA – SemiQ, a designer, developer, and global supplier of superior silicon carbide (SiC) solutions for...
Do the Significant Performance Benefits of SiC MOSFETs Warrant the Retirement of the IGBT?

Do the Significant Performance Benefits of SiC MOSFETs Warrant the Retirement of the IGBT?

by admin | Oct 23, 2024 | Blog

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Recent Posts

  • 1200 V QSiC™ Dual3 Modules Enable Power Converters with Industry-Leading Conversion Efficiency and Power Density
  • SemiQ to Debut SiC Power Solutions for Next-Gen AI Datacenters and High-Power Infrastructure at APEC 2026
  • SemiQ Establishes Distribution Partnership with NAC Semi to Expand Global Reach for Silicon Carbide Solutions
  • SemiQ Launches Gen3 1200 V S3 Modules with Record Current Density for High-Power Industrial and EV Applications
  • SemiQ Expands 1200 V Gen3 SiC MOSFET Line with Launch of 7.4, 14.5 and 34 mΩ SOT-227 Modules

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