QSiC™ 1200V SiC Full Bridge Module – GCMX034B120B2H2P
Features • High speed switching SiC MOSFETs • Reliable body diode • All parts tested to greater than 1,350V • Kelvin reference for stable operation • Press fit terminal connections • Split DC negative terminals Benefits • Low switching losses • Low junction to case...
QSiC™ 1200V SiC Half Bridge Module – GCMX3P5B120S3B1-N
Features • 62mm standard footprint • High speed switching SiC MOSFETs • Reliable body diode • All parts tested to greater than 1,350V • Kelvin reference for stable operation • AlN Isolated baseplate Benefits • Low switching losses • Low junction to case thermal...
QSiC 1200V SiC Half Bridge Module – GCMX2P3B120S3B1-N
Features • 62mm standard footprint • High speed switching SiC MOSFETs • Reliable body diode • All parts tested to greater than 1,350V • Kelvin reference for stable operation • AlN Isolated baseplate Benefits • Low switching losses • Low junction to case thermal...