QSiC™ 1200V SiC Full-Bridge Module – GCMX008B120B3H1P

QSiC™ 1200V SiC Full-Bridge Module – GCMX008B120B3H1P

Features • High speed switching SiC MOSFETs • Reliable body diode • All parts tested to greater than 1,350V • Kelvin reference for stable operation • Press fit terminal connections Benefits • Low switching losses • Low junction to case thermal resistance • Very rugged...
QSiC™ 1200V SiC Full-Bridge Module – GCMX008B120B3H1P

1200V SiC Full-Bridge Module

Features: • High speed switching SiC MOSFETs • Reliable body diode • All parts tested to above 1350V • Kelvin reference for stable operation • Press fit terminal connections
QSiC™ 1200V SiC Full-Bridge Module – GCMX008B120B3H1P

1200V SiC Full-Bridge Module

Features • High speed switching SiC MOSFETs • Reliable body diode • All parts tested to above 1350V • Kelvin reference for stable operation • Press fit terminal connections
1200V SiC Full-Bridge Module

1200V SiC Full-Bridge Module

Features • High speed switching SiC MOSFETs • Reliable body diode • All parts tested to above 1350V • Kelvin reference for stable operation • Press fit terminal connections
QSiC™ 1200V SiC Full-Bridge Module – GCMX008B120B3H1P

1200V SiC Full-Bridge Module

Features • High speed switching SiC MOSFETs • Reliable body diode • All parts tested to above 1350V • Kelvin reference for stable operation • Press fit terminal connections