QSiC™ 1200V SiC Full-Bridge Module – GCMX034B120B2H2P

QSiC™ 1200V SiC Full-Bridge Module – GCMX034B120B2H2P

Features • High speed switching SiC MOSFETs • Reliable body diode • All parts tested to greater than 1,350V • Kelvin reference for stable operation • Press fit terminal connections • Split DC negative terminals Benefits • Low switching losses • Low junction to case...
QSiC™ 1200V SiC MOSFET – AS3T040A120T

QSiC™ 1200V SiC MOSFET – AS3T040A120T

Features • High speed switching • Reliable body diode • All parts tested to greater than 1,400V • Avalanche tested to 330mJ • Driver source pin for gate driving • Qualified for Automotive Applications Product Validation according to AEC-Q101 Benefits • Lower...
QSiC™ 1200V SiC MOSFET – GP3T072A120H

QSiC™ 1200V SiC MOSFET – GP3T072A120H

Features • High speed switching • Reliable body diode • All parts tested to greater than 1,400V • Avalanche tested to 160mJ • Driver source pin for gate driving Benefits • Lower capacitance • Higher system efficiency • Easy to parallel • Lower Switching Loss • Longer...
QSiC™ 1200V SiC MOSFET – AS3T040A120T

QSiC™ 1200V SiC MOSFET – GP3T020A120T

Features • High speed switching • Reliable body diode • All parts tested to greater than 1,400V • Avalanche tested to 700mJ • Driver source pin for gate driving Benefits • Lower capacitance • Higher system efficiency • Easy to parallel • Lower Switching Loss • Longer...
QSiC™ 1200V SiC MOSFET – AS3T040A120T

QSiC™ 1200V SiC MOSFET – GP3T040A120T

Features • High speed switching • Reliable body diode • All parts tested to greater than 1,400V • Avalanche tested to 330mJ • Driver source pin for gate driving Benefits • Lower capacitance • Higher system efficiency • Easy to parallel • Lower Switching Loss • Longer...