QSiC™ 1200V SiC Half-Bridge Module – GCMS2P0B120S4B1

QSiC™ 1200V SiC Half-Bridge Module – GCMS2P0B120S4B1

by | Apr 8, 2026

Features • 62mm x 152mm industry standard footprint • High speed switching SiC MOSFETs • Freewheeling SiC SBD with zero reverse recovery • All parts tested to greater than 1,350V • Kelvin reference for stable operation Benefits • Low switching losses • Low junction to...
QSiC™ 1200V SiC Half-Bridge Module – GCMS2P0B120S4B1

QSiC™ 1200V SiC Half-Bridge Module – GCMX1P4B120S4B1

by | Apr 8, 2026

Features • 62mm x 152mm industry standard footprint • High speed switching SiC MOSFETs • All parts tested to greater than 1,350V • Kelvin reference for stable operation • ZTA Isolated baseplate Benefits • Low switching losses • Low junction to case thermal resistance...
QSiC™ 1200V SiC Half-Bridge Module – GCMS2P0B120S4B1

QSiC™ 1200V SiC Half-Bridge Module – GCMX2P0B120S4B1

by | Apr 8, 2026

Features • 62mm x 152mm industry standard footprint • High speed switching SiC MOSFETs • All parts tested to greater than 1,350V • Kelvin reference for stable operation • ZTA Isolated baseplate Benefits • Low switching losses • Low junction to case thermal resistance...
QSiC™ 1200V SiC Half-Bridge Module – GCMS2P0B120S4B1

QSiC™ 1200V SiC Half Bridge Module – GCMX1P0B120S4B1

by | Mar 23, 2026

Features • 62mm x 152mm industry standard footprint • High speed switching SiC MOSFETs • All parts tested to greater than 1,350V • Kelvin reference for stable operation • ZTA Isolated baseplate Benefits • Low switching losses • Low junction to case thermal resistance...
QSiC™ 1200V SiC Half-Bridge Module – GCMS2P0B120S4B1

QSiC™ 1200V SiC Half Bridge Module – GCMS1P4B120S4B1

by | Mar 23, 2026

Features • 62mm x 152mm industry standard footprint • High speed switching SiC MOSFETs • Freewheeling SiC SBD with zero reverse recovery • All parts tested to greater than 1,350V • Kelvin reference for stable operation Benefits • Low switching losses • Low junction to...