QSiC™ 1200V SiC Half Bridge Module – GCMS1P0B120S4B1

QSiC™ 1200V SiC Half Bridge Module – GCMS1P0B120S4B1

by | Mar 23, 2026

Features • 62mm x 152mm industry standard footprint • High speed switching SiC MOSFETs • Freewheeling SiC SBD with zero reverse recovery • All parts tested to greater than 1,350V • Kelvin reference for stable operation Benefits • Low switching losses • Low junction to...
QSiC™ 1200V SiC MOSFET

QSiC™ 1200V SiC MOSFET

by | Jan 28, 2026

Features • High speed switching • Reliable body diode • All parts tested to greater than 1,400V Benefits • Lower capacitance • Higher system efficiency • Easy to parallel Applications • Solar Inverters • Switch mode power supplies, UPS • Induction heating and welding...
QSiC™ 1200V SiC Half Bridge Module – GCMX034B120B2B1P

QSiC™ 1200V SiC Half Bridge Module – GCMX034B120B2B1P

by | Jan 16, 2026

Features • High speed switching SiC MOSFETs • Reliable body diode • All parts tested to greater than 1,350V • Kelvin reference for stable operation • Press fit terminal connections Benefits • Low switching losses • Low junction to case thermal resistance • Very rugged...
QSiC™ 1200V SiC Six Pack Module – GCMX072B120B2T1P

QSiC™ 1200V SiC Six Pack Module – GCMX072B120B2T1P

by | Jan 13, 2026

Features • High speed switching SiC MOSFETs • Reliable body diode • All parts tested to greater than 1,350V • Kelvin reference for stable operation • Press fit terminal connections • Split DC negative terminals Benefits • Low switching losses • Low junction to case...
QSiC™ 1200V SiC Full Bridge Module – GCMX072B120B2H2P

QSiC™ 1200V SiC Full Bridge Module – GCMX072B120B2H2P

by | Jan 13, 2026

Features • High speed switching SiC MOSFETs • Reliable body diode • All parts tested to greater than 1,350V • Kelvin reference for stable operation • Press fit terminal connections • Split DC negative terminals Benefits • Low switching losses • Low junction to case...