QSiC™ 1200V SiC MOSFET – GP3T080A120J
Features • High speed switching • Reliable body diode • All parts tested to greater than 1,400V • Avalanche tested to 160mJ • Driver source pin for gate driving Benefits • Lower capacitance • Higher system efficiency • Easy to parallel • Lower Switching Loss • Longer...
QSiC™ 1200V SiC Six Pack Module – GCMX020A120B2T1P
Features • High speed switching SiC MOSFETs • Reliable body diode • All parts tested to greater than 1,350V • Kelvin reference for stable operation • Press fit terminal connections • Split DC negative terminals Benefits • Low switching losses • Low junction to case...
QSiC™ 1200V SiC Six Pack Module – GCMX040A120B2T1P
Features • High speed switching SiC MOSFETs • Reliable body diode • All parts tested to greater than 1,350V • Kelvin reference for stable operation • Press fit terminal connections • Split DC negative terminals Benefits • Low switching losses • Low junction to case...