1200V SiC Full Bridge Module

1200V SiC Full Bridge Module

Features: • High speed switching SiC MOSFETs • Reliable body diode • All parts tested to above 1350V • Kelvin reference for stable operation • Press fit terminal connections
QSiC™ 1200V SiC Half Bridge Module

QSiC™ 1200V SiC Half Bridge Module

Features 62mm footprint with reduced package height (17 mm) High speed switching SiC MOSFETs Reliable body diode All parts tested to above 1350V Kelvin reference for stable operation Isolated baseplate
QSiC™ 1200V SiC Half Bridge Module

1200V SiC Half Bridge Module

Features 62mm footprint with reduced package height (17 mm) Low inductance, low profile footprint Reduced voltage spikes and ringing Higher switching frequency operation Improved power density Enhanced EMI...
1200V SiC Full Bridge Module

1200V SiC Full Bridge Module

Features • High speed switching SiC MOSFETs • Reliable body diode • All parts tested to above 1350V • Kelvin reference for stable operation • Press fit terminal connections