QSiC™ 1200V SiC MOSFET – GP3T020A120T

QSiC™ 1200V SiC MOSFET – GP3T020A120T

Features • High speed switching • Reliable body diode • All parts tested to greater than 1,400V • Avalanche tested to 700mJ • Driver source pin for gate driving Benefits • Lower capacitance • Higher system efficiency • Easy to parallel • Lower Switching Loss • Longer...
QSiC™ 1200V SiC MOSFET – GP3T020A120T

QSiC™ 1200V SiC MOSFET – GP3T040A120T

Features • High speed switching • Reliable body diode • All parts tested to greater than 1,400V • Avalanche tested to 330mJ • Driver source pin for gate driving Benefits • Lower capacitance • Higher system efficiency • Easy to parallel • Lower Switching Loss • Longer...
QSiC™ 1200V SiC MOSFET – GP3T020A120T

QSiC™ 1200V SiC MOSFET – GP3T080A120T

Features • High speed switching • Reliable body diode • All parts tested to greater than 1,400V • Avalanche tested to 160mJ • Driver source pin for gate driving Benefits • Lower capacitance • Higher system efficiency • Easy to parallel • Lower Switching Loss • Longer...
QSiC™ 1200V SiC Half Bridge Module – GCMX3P5B120S3B1-N

QSiC™ 1200V SiC Half Bridge Module – GCMX3P5B120S3B1-N

Features • 62mm standard footprint • High speed switching SiC MOSFETs • Reliable body diode • All parts tested to greater than 1,350V • Kelvin reference for stable operation • AlN Isolated baseplate Benefits • Low switching losses • Low junction to case thermal...
QSiC™ 1200V SiC Half Bridge Module – GCMX3P5B120S3B1-N

QSiC 1200V SiC Half Bridge Module – GCMX2P3B120S3B1-N

Features • 62mm standard footprint • High speed switching SiC MOSFETs • Reliable body diode • All parts tested to greater than 1,350V • Kelvin reference for stable operation • AlN Isolated baseplate Benefits • Low switching losses • Low junction to case thermal...